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  • silicon wafer, <100>, p-type, contains boron as dopant, diam. × thickness 4 in x 525 μm
silicon wafer, <100>, p-type, contains boron as dopant, diam. × thickness 4 in x 525 μm

silicon wafer, <100>, p-type, contains boron as dopant, diam. × thickness 4 in x 525 μm

CAS :

7440-21-3

Grade :

PRIME

Mol. Formula :

Si

HSN Code :

9002

Purity :

Double side polished

Mol. Weight :

28.09

Packing :

Bottle / Drum

Also deals in

pyrrole-2-carboxylic acid, 97%

Pyrrole-2-carboxylic acid, 97%

  • CAS : 634-97-9
  • Mol. Formula : C5H5NO2
  • HSN Code : 29420090
zero order half wave retardation plate, dia 25 mm, thick 6 mm

Zero Order Half Wave Retardation Plate, Dia 25 mm, Thick 6 mm

  • HSN Code : 9001
  • Packing : Container
multi-walled carbon nanotubes, 99% [cooh functionalized] (od: 30-40 nm, length: 1-2 um)

Multi-Walled Carbon Nanotubes, 99% [COOH Functionalized] (OD: 30-40 nm, Length: 1-2 um)

  • CAS : 308068-56-6
  • HSN Code : 280300.90
  • Packing : Bottle / Drum
half wave plate (diameter: 12.7mm, coating: ar/ ar, r<0.25%@532nm)

Half wave plate (Diameter: 12.7mm, Coating: AR/ AR, R<0.25%@532nm)

  • Grade : for synthesis
  • Packing : Container
1-methoxy-2-propyl acetate, 99%

1-Methoxy-2-propyl acetate, 99%

  • CAS : 108-65-6
  • Grade : puriss
  • Mol. Formula : CH3CO2CH(CH3)CH2OCH3
ccf 642, ≥98%

CCF 642, ≥98%

  • CAS : 346640-08-2
  • Mol. Formula : C15H10N2O4S3
  • HSN Code : 2942

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